PART |
Description |
Maker |
2SB1182 2SB1188 2SB822 2SB911M 2SB1240 A5800350 2S |
From old datasheet system Medium power Transistor(-32V/ -2A) Medium power Transistor(-32V, -2A) 中等功率晶体管(- 32V的,- 2A型)
|
Rohm Co., Ltd.
|
2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62 From old datasheet system Medium Power Transistor (-32A,-1A) Transistors > Small Signal Bipolar Transistors(up to 0.6W) Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd. Rohm CO.,LTD. ROHM[Rohm]
|
2SC2411KT146R |
Medium Power Transistor (32V, 0.5A)
|
Rohm
|
2SA1577 |
Medium Power Transistor (-32V, -0.5A)
|
ROHM[Rohm]
|
2SB113209 2SB1132 2SA1515S 2SB1237 2SB1132T100P |
Medium Power Transistor (-32V, -1A) Medium Power Transistor (-32V,?1A)
|
Rohm
|
L2SD1781KRLT1G L2SD1781KLT1 L2SD1781KQLT1 L2SD1781 |
Medium Power Transistor(32V, 0.8A) 中等功率晶体管(32V的,0.8A
|
Leshan Radio Company, Ltd. LRC[Leshan Radio Company]
|
2DB1188P-13 2DB1188Q 2DB1188Q-13 2DB1188R 2DB1188R |
32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
|
Diodes Incorporated
|
2SC2411K 2SC2411KT146Q |
Medium Power Transistor (32V, 0.5A)
|
Rohm
|
2SB1197K A5800311 2SB1197KQ |
Low Frequency Transistor(-32V/ -0.8A) Transistors > Small Signal Bipolar Transistors(up to 0.6W) From old datasheet system Low Frequency Transistor(-32V, -0.8A) 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
Rohm
|
T1G4004532-FS T1G4004532-FSEVB1 |
45W, 32V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|